Used for synthesizing 2D and other nanostructured  materials 

Used for regular electrical and optoelectrical characterizations

Used for  anisotropic etching of nanostructures

Used for optoelectrical measurements at low temperature

For  measurement PL of nanostructures samples

For measuring photocurrent of monolayer TMDs and van der Waals heterostructures

For measuring electronic transport properties down to ~3K in presence of 1.5 T magnetic field.

For measuring dielectric properties up to 2 MHz in presence of DC bias.

For making nanodevices

For  electrical and optoelectrical characterizations

Used for  making van der Waals heterostructures.

Used for electrical measurements under strain

For determining thickness of thin-films and measuring reflectance, absorbance and transmittance 

For measuring Raman, PL Reflectance down to LHe temperature.

For measuring electronic transport properties of FET, Neuromorphic devices etc.