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Nano-Q
IISER Pune
Quantum transport in 2D materials
We study the low-temperature magneto-transport properties of various 2D materials and their heterostructures. The devices are mainly made from monolayer MoS2. MoSe2, WS2, WSe2 and graphene. Our objective is to gain a deeper understanding of how the interplay between interactions and disorders affects carrier transport behaviour in these materials. To explore them, we perform I-V, C-V, C-f, R-T, R-H, photoresponse and low-frequency noise characteristics.
High mobility 2D materials
Recently synthesized atomically thin Bismuth oxychalcogenides are novel semiconductors with ultrahigh mobility and possess interesting properties like ferroelectricity/ferroelasticity, and anisotropic charge transport. The rich interplay between spin-orbit coupling and topology in these materials has sparked interest in their topological electronic properties. Overall, high-mobility Bismuth oxychalcogenides hold great promise for the advancement of next-generation electronic devices and fundamental research in condensed matter physics.
Origin of inhomogeneity in 2D materials
Inhomogeneity in 2D materials can arise from various factors, including defects, impurities, and strain. Imperfections in the lattice structure or variations in composition can lead to spatial variations in properties such as conductivity and optical response. These inhomogeneities significantly influence the behaviour and performance of 2D materials-based devices. This study is very important for various applications like photodetector, phototransistors and memory devices.
Optoelectronic properties of twisted nanostructures
The unique optoelectronic properties of twisted nanostructures arise from the intentional twisting or rotation of 2D or 1D materials. This twisting can result in modified electronic band structures, exciton engineering, and enhanced light-matter interactions. These twisted nanostructures offer exciting prospects for developing novel quantum devices, such as twistronics-based photodetectors and light-emitting devices. The control over the optoelectronic properties through twist engineering opens up new avenues for exploring and exploiting light-matter interactions at the nanoscale.
Optoelectronic properties of 2D-3D heterostructured materials
The optoelectronic properties of 2D-3D heterostructures encompass distinctive optical and electronic characteristics that emerge when combining 2D and 3D materials. These heterostructures exhibit enhanced light-matter interactions, tunable bandgaps, and efficient charge transport. They enable the development of novel photonic and electronic devices with enhanced performance, which has significant implications for applications such as solar cells, photodetectors, light-emitting diodes, and quantum devices.
Electronic Phase transition in 2D materials
The electronic phase transition in 2D materials can be induced by various factors such as temperature, doping, strain, or electric field. The intricate interplay between quantum confinement, electron-electron interactions, and disorder leads to the emergence of distinct electronic phases. Understanding and controlling this transition is very interesting for developing novel electronic devices. The metal-insulator transition in 2D materials offers opportunities for designing high-performance transistors, sensors, and memory devices. Moreover, it holds potential for exploring fundamental physics phenomena and advancing the field of quantum materials.
Tuning 2D materials' properties through dielectric engineering
Tuning 2D materials' properties through dielectric engineering involves manipulating their characteristics by modifying the surrounding dielectric environment. By selectively choosing and altering dielectric materials, it is possible to control parameters such as bandgap, charge carrier density, and optical response of 2D materials. This approach enables precise tailoring of the material's properties for specific applications, including electronics, optoelectronics, and energy devices. Dielectric engineering provides a versatile and effective strategy to optimize and enhance the functionalities of 2D materials
Opto-electronic properties of 2DTMD-perovskite hybrid structures
2D perovskite nanostructures offer tunable bandgaps, strong quantum confinement effects, and efficient charge transport. Recently, we successfully conducted a controlled synthesis of high-quality 2D perovskite nanostructures, enabling precise manipulation of their properties. The devices fabricated using these materials exhibited exceptionally low leakage current and even demonstrated ferroelectric behaviour, further highlighting their promising optoelectronic characteristics.
Applications of nanostructured materials for energy harvesting and sensors
Nanostructured materials find diverse applications in energy harvesting and sensors. In energy harvesting, they enhance efficiency by enabling improved light absorption, charge separation, and catalytic reactions. For sensors, their high surface area and tailored optoelectrical properties enable superior sensitivity, selectivity, and response time. Highly dense nanoparticles with <10nm separation can serve as a sensitive platform for LSPR and SERS-based sensors. We are working in various sensor platforms like nanoparticle and FET-based sensors for chemical and biomedical applications.
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